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AM29LV800BB120SCB 数据手册 ( 数据表 ) - Advanced Micro Devices

AM29LV800BT70R image

零件编号
AM29LV800BB120SCB

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42 Pages

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533.5 kB

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AMD
Advanced Micro Devices 

GENERAL DESCRIPTION
   The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS
◾ Single power supply operation
   — Full voltage range: 2.7 to 3.6 volt read and write
      operations for battery-powered applications
   — Regulated voltage range: 3.0 to 3.6 volt read
      and write operations and for compatibility with
      high performance 3.3 volt microprocessors
◾ Manufactured on 0.35 µm process technology
   — Compatible with 0.5 µm Am29LV800 device
◾ High performance
   — Full voltage range: access times as fast as 80 ns
   — Regulated voltage range: access times as fast
      as 70 ns
◾ Ultra low power consumption (typical values at
   5 MHz)
   — 200 nA Automatic Sleep mode current
   — 200 nA standby mode current
   — 7 mA read current
   — 15 mA program/erase current
◾ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      fifteen 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      fifteen 32 Kword sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
      A hardware method of locking a sector to
      prevent any program or erase operations within
      that sector
      Sectors can be locked in-system or via
      programming equipment
      Temporary Sector Unprotect feature allows code
      changes in previously locked sectors
(Continue ...)


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