
Advanced Micro Devices
GENERAL DESCRIPTION
The Am29DS323D family consists of 32 megabit, 1.8 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ0–DQ15; byte mode data appears on DQ0–DQ7. The device is designed to be programmed in-system with the standard 1.8 volt VCC supply, and can also be programmed in standard EPROM programmers.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
◾ Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
◾ Multiple bank architectures
— Two devices available with different bank sizes (refer
to Table 3)
◾ Secured Silicon (Secured Silicon) Sector
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
— Customer lockable: Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
— 64 Kbyte sector size
◾ Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
◾ Package options
— 48-ball FBGA
— 48-pin TSOP
◾ Top or bottom boot block
◾ Manufactured on 0.23 µm process technology
◾ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
◾ High performance
— Access time as fast 110 ns
— Program time: 13 µs/word typical;
with Accelerate function, 7 µs/word typical
◾ Ultra low power consumption (typical values)
— 1 mA active read current at 1 MHz
— 5 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
◾ Minimum 1 million write cycles guaranteed per sector
◾ 20 Year data retention at 125°C
— Reliable operation for the life of the system