GENERAL DESCRIPTION
The ADG1201 is a monolithic complementary metal-oxide semiconductor (CMOS) device containing a single-pole, single-throw (SPST) switch designed in an iCMOS® process. iCMOS is a modular manufacturing process combining a high voltage CMOS and bipolar technologies. iCMOS enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage devices has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size.

FEATURES
   2.4 pF typical off switch source capacitance, dual supply
   <1 pC charge injection
   Low leakage: 0.6 nA maximum at 85°C
   120 Ω typical on resistance at 25°C, dual supply
   Fully specified at ±15 V, +12 V
   No VL supply required
   3 V logic-compatible inputs
      VINH = 2.0 V minimum
      VINL = 0.8 V maximum
   Rail-to-rail operation
   6-lead SOT-23 package

APPLICATIONS
   Automatic test equipment
   Data acquisition systems
   Battery-powered systems
   Sample-and-hold systems
   Audio signal routing
   Video signal routing
   Communication systems