零件编号
A1758
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New Jersey Semiconductor
A1758 数据手册 ( 数据表 ) - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
• DC Current Gain-
: hFE= 60(Min)@ (VCE= -2V, lc= -2A)
• Low Saturation Voltage-
: VCE(sat)= -0.3V(Max)@ (|c= -6A, IB= -0.3A)
APPLICATIONS
• Designed for power switching applications.
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