Features
• Adoption of FBET, MBIT processes
• High breakdown voltage, large current capacity
• Fast switching speed
Bipolar Transistor -50V, -1A, Low VCE(sat), PNP Single NMP
ON Semiconductor
Bipolar Transistor (–)100V, (–)1A, Low VCE(sat), (PNP)NPN Single PCP
ON Semiconductor
Bipolar Transistor –180V, –160A, Low VCE(sat) PNP Single NMP
ON Semiconductor
Bipolar Transistor (–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single NMP
ON Semiconductor
Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single NMP
ON Semiconductor
Bipolar Transistor (−)100V, (−)4A, Low VCE(sat), (PNP)NPN Single ( Rev : 2013 )
ON Semiconductor
Bipolar Transistor (−)100V, (−)4A, Low VCE(sat),(PNP)NPN Single
ON Semiconductor
Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA
ON Semiconductor
Bipolar Transistor (–)50V, (–)1A, Low VCE(sat), (PNP)NPN Single MCPH6
ON Semiconductor
Bipolar Transistor –100V, –2A, Low VCE(sat) PNP Single PCP
ON Semiconductor