General Description
   This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

FEATUREs
◾ Max rDS(on) = 100 m at VGS = 10 V, ID = 3.3 A
◾ Max rDS(on) = 145 m at VGS = 4.5 V, ID = 2.7 A
◾ High performance trench technology for extremely low rDS(on)
◾ High power and current handling capability in a widely used
  surface mount package
◾ HBM ESD protection level > 3 KV typical (Note 4)
◾ 100% UIL tested
◾ RoHS Compliant

APPLICATION
◾ DC - DC Switch