datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  MAXWELL TECHNOLOGIES  >>> 79C0408 PDF

79C0408 数据手册 ( 数据表 ) - MAXWELL TECHNOLOGIES

79C0408 image

零件编号
79C0408

Other PDF
  no available.

PDF
DOWNLOAD     

page
20 Pages

File Size
346.8 kB

生产厂家
Maxwell
MAXWELL TECHNOLOGIES 

DESCRIPTION:
Maxwell Technologies’ 79C0408 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell Technol ogies’ patented radiation-hardened RAD-PAK® MCM packaging technology, the 79C0408 is the first radiation-hard ened 4 Megabit MCM EEPROM for space applications. The 79C0408 uses four 1 Megabit high-speed CMOS die to yield a 4 Megabit product. The 79C0408 is capable of in-system electrical Byte and Page programmability. It has a 128 bytes Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations.
Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, the RAD-PAK® package provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class K.


FEATURES:
• Four 128k x 8-bit EEPROMs MCM
• RAD-PAK® radiation-hardened against natural space radiation
• Total dose hardness:
   - > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects
   - SEL > 120 MeV/mg/cm2
   - SEU > 90 MeV/mg/cm2 read mode
   - SEU = 18 MeV/mg/cm2 write mode
• Package:
• - 40 pin RAD-PAK® flat pack
• - 40 pin X-Ray PakTM flat pack
• - 40 pin Rad-Tolerant flat pack
• High speed:
   - 120, 150, and 200 ns maximum access times available
• Data Polling and Ready/Busy signal
• Software data protection
• Write protection by RES pin
• High endurance
   - 10,000 erase/write (in Page Mode),
   - 10 year data retention
• Page write mode: 1 to 128 byte page
• Low power dissipation
   - 80 mW/MHz active mode
   - 440 µ W standby mode

 

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

零件编号
产品描述 (功能)
视图
生产厂家
20 Megabit (512K x 40-Bit) EEPROM MCM
PDF
MAXWELL TECHNOLOGIES
8 Megabit (256K x 32-Bit) EEPROM MCM
PDF
MAXWELL TECHNOLOGIES
16 Megabit (512K x 32-Bit) MCM SRAM
PDF
MAXWELL TECHNOLOGIES
4 Megabit (512K x 8-Bit) SRAM
PDF
MAXWELL TECHNOLOGIES
4 Megabit (512K x 8-bit) Flash Memory
PDF
Eon Silicon Solution Inc.
4 Megabit (512K x 8-Bit) CMOS SRAM
PDF
MAXWELL TECHNOLOGIES
4 Megabit (512K x 8-bit) Flash Memory
PDF
Eon Silicon Solution Inc.
4 Megabit (512K x 8-bit) Flash Memory
PDF
Unspecified
4 Megabit 3.3V Static RAM 512K x 8-Bit
PDF
Paradigm Technology
4-megabit (512K x 8) Flash Memory
PDF
Atmel Corporation

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]