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74HC3G07DP 数据手册 ( 数据表 ) - NXP Semiconductors.

74HC3G07 image

零件编号
74HC3G07DP

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13 Pages

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76.7 kB

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NXP
NXP Semiconductors. 

General description
The 74HC3G07 and 74HCT3G07 are high-speed Si-gate CMOS devices. They provide three buffers with open-drain outputs.
The outputs of the 74HC3G07 and 74HCT3G07 devices are open drains and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level.


FEATUREs
Wide supply voltage range from 2.0 V to 6.0 V
High noise immunity
Low power dissipation
Multiple package options
ESD protection:
  HBM JESD22-A114E exceeds 2000 V
  MM JESD22-A115-A exceeds 200 V
Specified from−40°C to +85°C and−40°C to +125°C

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