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630N PDF
630N 数据手册 ( 数据表 ) - Fairchild Semiconductor
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Fairchild Semiconductor
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.200Ω (Typ), VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER© Electrical Models
- Spice and SABER© Thermal Impedance Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
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N-Channel Power MOSFETs, 9A, 150V/200V
Fairchild Semiconductor
N-Channel Power Mosfets 12A, 150-200V
ARTSCHIP ELECTRONICS CO.,LMITED.
N-Channel Power MOSFETs, 3.5A, 150-200V
Fairchild Semiconductor
N-Channel Power MOSFETs, 18A, 150-200V
Fairchild Semiconductor
N-Channel Power MOSFETs 7A 150-200V
Fairchild Semiconductor
N-Channel Power Mosfets 7A,150-200V
Unspecified
N-Channel Power MOSFETs, 30A, 150V/200V
Fairchild Semiconductor
N-Channel Power MOSFETs 200V, 18A, 0.15Ω
Fairchild Semiconductor
4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs
Intersil
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
Fairchild Semiconductor
