Description:
Each isolator in this series consists of an infraredemitting diode and a NPN silicon phototransistor, which are mounted in a hermetically sealed TO-78 package. Devices are designed for military and/or harsh environments. The suffix letter “A” denotes the collector is electrically isolated from the case.
The 4N22, 4N22A, 4N23, 4N23A,4N24, and 4N24A (TX, TXV)devices are processed to MIL-PRF-19500/486.
The 4N47, 4N47A, 4N48, 4N48A, 4N49, and 4N49A (TX, TXV) devices are processed to MIL-PRF-19500/548.

FEATUREs:
• TO-78 hermetically sealed package
• High current transfer ratio
• 1 kV electrical isolation
• Base contact provided for conventional transistor biasing
• TX and TXV devices processed to MIL-PRF-19500
• Patent No. 4124860