HOME >>> Hitachi -> Renesas Electronics >>>
3SK309 PDF
3SK309 数据手册 ( 数据表 ) - Hitachi -> Renesas Electronics
生产厂家
Hitachi -> Renesas Electronics
Features
• Capable of low voltage operation (VDS = 1.5 to 3 V)
• Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz)
• High power gain (PG = 21.0 dB typ. at f = 900 MHz)
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
GaAs N-channel Dual-Gate MES FET
Sony Semiconductor
GaAs N-channel Dual Gate MES FET
Sony Semiconductor
GaAs N-channel Dual Gate MES FET
Sony Semiconductor
GaAs N-channel Dual-Gate MES FET
Sony Semiconductor
GaAs N-channel Dual Gate MES FET
Sony Semiconductor
GaAs N-channel Dual-Gate MES FET
Sony Semiconductor
GaAs N-channel Dual Gate MES FET
Sony Semiconductor
GaAs N-channel Dual-Gate MES FET
Sony Semiconductor
GaAs N-channel Dual-Gate MES FET
Sony Semiconductor
GaAs N-channel Dual Gate MES FET
Sony Semiconductor
