3SK223(2001) 数据手册 ( 数据表 ) - NEC => Renesas Technology
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NEC => Renesas Technology
FEATURES
• The Characteristic of Cross-Modulation is good.
CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB
• Low Noise Figure: NF1 = 2.2 dB TYP. (f = 470 MHz)
NF2 = 0.9 dB TYP. (f = 55 MHz)
• High Power Gain: GPS = 20 dB TYP. (f = 470 MHz)
• Enhancement Type.
• Suitable for use as RF amplifier in CATV tuner.
• Automatically Mounting: Embossed Type Taping
• Small Package: 4 Pins Mini Mold
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
NEC => Renesas Technology
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
NEC => Renesas Technology
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
NEC => Renesas Technology
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD
NEC => Renesas Technology
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
NEC => Renesas Technology
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD
NEC => Renesas Technology
AF & RF AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR MINI MOLD
NEC => Renesas Technology