3DD13001 数据手册 ( 数据表 ) - Transys Electronics Limited
生产厂家
Transys Electronics Limited
TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 1.2 W (Tamb=25℃)
Collector current
ICM: 0.2 A
Collector-base voltage
V(BR)CBO: 600 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-251 Plastic-Encapsulated Transistors
Transys Electronics Limited
TO-251 Plastic-Encapsulated Transistors
Transys Electronics Limited
TO-251 Plastic-Encapsulated Transistors
Unspecified
TO-251 Plastic-Encapsulated Transistors
Transys Electronics Limited
TO-251 Plastic-Encapsulated Transistors
Transys Electronics Limited
TO-251 Plastic-Encapsulated Transistors
Transys Electronics Limited
TO-251/252 Plastic-Encapsulated Transistors
Transys Electronics Limited
TO-251 Plastic-Encapsulated Transistors (NPN)
Transys Electronics Limited
TO-251 PNP Plastic-Encapsulated Transistors
Transys Electronics Limited
TO-251/TO-252-2Plastic-Encapsulated Transistors
Transys Electronics Limited
