300N4F6 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
FEATUREs
■ Standard level VGS(th)
■ 100% avalanche rated
APPLICATIONs
■ Automotive switching applications
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N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package
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Automotive-grade N-channel 40 V, 5.5 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package ( Rev : 2014 )
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N-channel 800 V, 0.23 Ω typ., 16 A MDmesh K5 Power MOSFET in a D²PAK package
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N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5 Power MOSFET in a D²PAK package ( Rev : 2015 )
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N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFET in a D²PAK package
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N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a D²PAK package
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N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a D²PAK package ( Rev : 2016 )
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N-channel 60 V, 4.7 mΩ typ.,100 A STripFET™ F7 Power MOSFET in a D²PAK package
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N-channel 600 V, 162 mΩ typ., 17 A, MDmesh™ M6 Power MOSFET in a D²PAK package
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Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET™ F7 Power MOSFET in an I²PAK package
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