Description
The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage.

FEATUREs
■ High breakdown voltage VCEO = 80 V
■ Complementary to 2STW1693
■ Typical ft = 20 MHz
■ Fully characterized at 125℃

APPLICATIONs
■ Audio power amplifier