2SK4015 数据手册 ( 数据表 ) - Toshiba
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Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.60 Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.4 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VI) ( Rev : 2007 )
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOS VI)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOS VI) ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOS VI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOS VI) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOS VI) ( Rev : 2006 )
Toshiba