2SK3793 数据手册 ( 数据表 ) - NEC => Renesas Technology
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NEC => Renesas Technology
DESCRIPTION
The 2SK3793 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 6 A)
RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 6 A)
• Low Ciss: Ciss = 900 pF TYP.
• Built-in gate protection diode
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SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics