2SK3447(2005) 数据手册 ( 数据表 ) - Renesas Electronics
生产厂家
Renesas Electronics
Features
• Capable of 4 V gate drive
• Low drive current
• Low on-resistance
RDS (on) = 1.5 Ω typ. (at VGS = 10 V)
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Silicon N Channel Power MOS FET Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching ( Rev : 2010_07 )
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics
