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2SK3287 PDF
2SK3287 数据手册 ( 数据表 ) - Hitachi -> Renesas Electronics
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Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
FEATUREs
• Low on-resistance
RDS= 1.26 Ωtyp. (VGS= 10 V , ID= 150 mA)
RDS= 2.8 Ωtyp. (VGS= 4 V , ID= 50 mA)
• 4 V gate drive device.
• Small package (MPAK)
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Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET HIGH SPEED SWITCHING
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
