2SK2925 数据手册 ( 数据表 ) - Renesas Electronics
生产厂家
Renesas Electronics
Features
* Low on-resistance Rds = 0.060ohm type.
* High Speed Switching.
* 4V gate drive device can be driven from 5V source
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HIGH-SPEED SWITCHING USENch POWER MOSFET HIGH-SPEED SWITCHING USE
Mitsumi
SILICON N-CHANNEL MOSFET HIGH SPEED POWER SWITCHING
Hitachi -> Renesas Electronics
Silicon N-Channel MOSFET High-Speed Power Switching
Renesas Electronics
Silicon N-Channel MOSFET High-Speed Power Switching
Renesas Electronics
N-Channel Power MOSFET High-Speed Switching Use
Renesas Electronics
Silicon N-Channel MOSFET High-Speed Power Switching
Renesas Electronics
Silicon N-Channel MOSFET High-Speed Power Switching
Renesas Electronics
N-Channel Power MOSFET High-Speed Switching Use
Renesas Electronics
N-channel MOSFET high speed power switching, 500V, 5A
Hitachi -> Renesas Electronics
HIGH SPEED POWER SWITCHING
Hitachi -> Renesas Electronics
