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2SK2795 PDF
2SK2795 数据手册 ( 数据表 ) - Hitachi -> Renesas Electronics
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Hitachi -> Renesas Electronics
Features
• High power output, High gain, High effeciency
PG = 11dB, Pout = 24dBm, ηD = 40 %min. (f = 836.5MHz)
• Compact package capable of surface mounting
Silicon N-Channel MOS FET UHF Power Amplifier
Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier ( Rev : 2007 )
Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier
Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Hitachi -> Renesas Electronics
