2SK2745 数据手册 ( 数据表 ) - Toshiba
生产厂家

Toshiba
Field Effect Transistor Silicon N Channel MOS Type (L²−π−MOSV)
Chopper Regulator, DC−DC Converter and Motor Drive Applications
4-V gate drive
Low drain−source ON resistance : RDS(ON)= 7.0 mΩ(typ.)
High forward transfer admittance : |Yfs| = 50 S (typ.)
Low leakage current : IDSS= 100 μA (max) (VDS= 50 V)
Enhancement mode : Vth= 0.8 to 2.0 V (VDS= 10 V, ID= 1 mA)
Silicon N-Channel MOS Type (π−MOSV) Field Effect Transistor
Toshiba
Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
Toshiba
Silicon N Channel MOS Type (π−MOSV) Field Effect Transistor ( Rev : 2006 )
Toshiba
Silicon N Channel MOS Type (π−MOSV) Field Effect Transistor
Toshiba
Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Toshiba
Silicon N Channel MOS Type (π-MOSV) Field Effect Transistor
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
Toshiba
Silicon N Channel MOS Type (π−MOSV) Field Effect Transistor
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba