2SK2508(2006) 数据手册 ( 数据表 ) - Toshiba
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Toshiba
Switching Regulator and DC−DC Converter and Motor
Applications
• Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.)
• High forward transfer admittance : |Yfs| = 13 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 250 V)
• Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2010 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Toshiba