2SK246 数据手册 ( 数据表 ) - Toshiba
生产厂家
Toshiba
For Constant Current, Impedance
Converter and DC-AC High Input
Impedance Amplifier Circuit Applications
• High breakdown voltage: VGDS = −50 V
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
