2SK2415-Z-T1 数据手册 ( 数据表 ) - NEC => Renesas Technology
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NEC => Renesas Technology
The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
Features
• Low on-state resistance
RDS(on)1 = 0.10 Ω MAX. (VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 0.15 Ω MAX. (VGS = 4 V, ID = 4.0 A)
• Low Ciss: Ciss = 570 pF TYP.
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SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics