2SK2365 数据手册 ( 数据表 ) - NEC => Renesas Technology
生产厂家
NEC => Renesas Technology
DESCRIPTION
The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2365: RDS(on) = 0.5 Ω (VGS = 10 V, ID = 5.0 A)
2SK2366: RDS(on) = 0.6 Ω (VGS = 10 V, ID = 5.0 A)
• Low Ciss Ciss = 1 600 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor
