2SK1529 数据手册 ( 数据表 ) - Toshiba
生产厂家
Toshiba
High-Power Amplifier Application
● High breakdown voltage : VDSS = 180 V
● High forward transfer admittance : |Yfs| = 4.0 S (typ.)
● Complementary to 2SJ200
Field Effect Transistor Silicon N Channel MOS Type
New Jersey Semiconductor
Silicon N Channel MOS Type Field Effect Transistor
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Toshiba
N-channel MOS Type Silicon Field Effect Transistor
SANYO -> Panasonic
Field Effect Transistor Silicon N-Channel MOS Type
Unspecified
Field Effect Transistor Silicon N Channel MOS Type
Toshiba
Field Effect Transistor Silicon N Channel MOS Type
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Toshiba
N channel MOS type silicon field effect transistor ( Rev : V2 )
SANYO -> Panasonic
