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2SJ647 数据手册 ( 数据表 ) - NEC => Renesas Technology

2SJ647 image

零件编号
2SJ647

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6 Pages

File Size
57.4 kB

生产厂家
NEC
NEC => Renesas Technology 

DESCRIPTION
The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source.
The 2SJ647 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• 2.5 V drive available
• Low on-state resistance
   RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A)
   RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A)
   RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)


零件编号
产品描述 (功能)
视图
生产厂家
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

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