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2SJ625-T1B 数据手册 ( 数据表 ) - NEC => Renesas Technology

2SJ625 image

零件编号
2SJ625-T1B

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page
8 Pages

File Size
59.6 kB

生产厂家
NEC
NEC => Renesas Technology 

DESCRIPTION
The 2SJ625 is a switching device which can be driven directly by a 1.8 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

FEATURES
• 1.8 V drive available
• Low on-state resistance
   RDS(on)1 = 113 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
   RDS(on)2 = 171 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
   RDS(on)3 = 314 mΩ MAX. (VGS = –1.8 V, ID = –1.0 A)


零件编号
产品描述 (功能)
视图
生产厂家
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

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