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2SJ624 数据手册 ( 数据表 ) - Renesas Electronics

2SJ624 image

零件编号
2SJ624

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page
10 Pages

File Size
175 kB

生产厂家
Renesas
Renesas Electronics 

DESCRIPTION
The 2SJ624 is a switching device which can be driven directly by a 1.8 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• 1.8 V drive available
• Low on-state resistance
    RDS(on)1 = 54 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
    RDS(on)2 = 71 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A)
    RDS(on)3 = 108 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)


零件编号
产品描述 (功能)
视图
生产厂家
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

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