HOME >>> Hitachi -> Renesas Electronics >>>
2SJ552 PDF
2SJ552 数据手册 ( 数据表 ) - Hitachi -> Renesas Electronics
生产厂家
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET
High Speed Power Switching
FEATUREs
• Low on-resistance
RDS(on)= 0.042Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Page Link's:
1
2
3
4
5
6
7
8
9
Silicon P-Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
