2SJ492-S 数据手册 ( 数据表 ) - NEC => Renesas Technology
生产厂家
NEC => Renesas Technology
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits.
FEATURES
• Low on-state resistance
RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A)
RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A)
• Low Ciss: Ciss = 1210 pF (TYP.)
• Built-in gate protection diode
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SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
