DESCRIPTION
   This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits.

FEATURES
• Low on-state resistance
   RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A)
   RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID = −10 A)
• Low input capacitance
   Ciss = 1210 pF TYP.
• Built-in gate protection diode