2SJ205-T1 数据手册 ( 数据表 ) - NEC => Renesas Technology
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NEC => Renesas Technology
Features
● Directly driven by ICs having a 3V poer supply.
● Not necessary to consider driving current because of its high input impedance.
● Possible to reduce the number of parts by omitting the bias resistor.
● Has low on-state resistance
RDS(on)=5Ω MAX.@VGS=-2.5V,ID=-10mA
RDS(on)=3Ω MAX.@VGS=-4V,ID=-300mA
P-CHANNEL MOS FET FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FET FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FET FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FET FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FET FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FET FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FET FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FET FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FET FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FET FOR SWITCHING
NEC => Renesas Technology