datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  Renesas Electronics  >>> 2SJ198 PDF

2SJ198 数据手册 ( 数据表 ) - Renesas Electronics

2SJ198 image

零件编号
2SJ198

产品描述 (功能)

Other PDF
  no available.

PDF
DOWNLOAD     

page
9 Pages

File Size
480 kB

生产厂家
Renesas
Renesas Electronics 

P-CHANNEL MOSFET FOR SWITCHING

   The 2SJ198 is a p-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply. The device featuring low ON-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays.


FEATURES
• Low ON-state resistance
   RDS(on) = 2.5 Ω MAX. at VGS = -4 V, ID = -0.5 A
   RDS(on) = 2.0 Ω MAX. at VGS = -10 V, ID = -0.5 A
• Voltage drive at logic level (VGS = -4 V) is possible.
• Bidirectional zener diode for protection is incorporated in be-tween the Gate and the Source.
• Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the Drain and Source.
• Complementary to 2SK1484


Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]