2SJ103(1997) 数据手册 ( 数据表 ) - Toshiba
生产厂家
Toshiba
FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND
IMPEDANCE CONVERTER APPLICATIONS
• High Breakdown Voltage: VGDS= 50 V
• High Input Impedance: IGSS= 1.0 nA (Max.) (VGS= 30 V)
• Low RDS (ON): RDS (ON)= 270 Ω(Typ.) (IDSS= −5 mA)
• Complimentary to 2SK246
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
