2SD999 数据手册 ( 数据表 ) - Galaxy Semi-Conductor
生产厂家
Galaxy Semi-Conductor
FEATURES
● Low Collector Saturation Voltage: VCE(sat)<0.4V( IC=1.0A,IB =100mA)
● Excellent DC Current Gain Linearity: hFE=140Typ.( VCE=1.0V, IC=1.0A)
● Complements to PNP type 2SB798
Silicon NPN Epitaxial Transistor
Galaxy Semi-Conductor
Silicon NPN Epitaxial Transistor
Renesas Electronics
Silicon NPN Epitaxial Transistor
KEXIN Industrial
Silicon NPN Epitaxial Transistor
Renesas Electronics
SILICON EPITAXIAL NPN TRANSISTOR
Semelab - > TT Electronics plc
SILICON EPITAXIAL NPN TRANSISTOR ( Rev : 1996 )
Semelab - > TT Electronics plc
NPN Silicon epitaxial Transistor
Shenzhen Luguang Electronic Technology Co., Ltd
NPN Silicon Epitaxial Transistor
KEXIN Industrial
NPN Silicon Epitaxial Transistor
Semtech Electronics LTD.
NPN Silicon Epitaxial Transistor
KEXIN Industrial
