零件编号
2SD334
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Inchange Semiconductor
2SD334 数据手册 ( 数据表 ) - Inchange Semiconductor
Inchange Semiconductor
Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V (Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifier applications.
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