2SD330 数据手册 ( 数据表 ) - Inchange Semiconductor
生产厂家

Inchange Semiconductor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 2.0A
·Complement to Type 2SB514
APPLICATIONS
·Especially suited for use in output stage of 10W AF power amplifier.

Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor