2SD2449 数据手册 ( 数据表 ) - Toshiba
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Power Amplifier Applications
● High breakdown voltage: VCEO = 160 V (min)
● Complementary to 2SB1594
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
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Transistor Silicon NPN Triple Diffused Type (Darlington)
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TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
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Silicon NPN Triple Diffused Type (Darlington) Transistor
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER TRANSISTOR)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 2001 )
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