2SD2131 数据手册 ( 数据表 ) - ETC
生产厂家
ETC
[Toshiba]
HIGH POWER SWITCHING APPLICATIONS
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS
• High DC Current Gain: hFE = 2000 (Min.) (VCE = 3 V, IC = 3 A)
• Low Saturation Voltage: VCE (sat) = 1.5 V (Max.) (IC = 3 A)
• Zener Diode Included Between Collector and Base.
• Unclamped Inductive Load Energy: E = 150 mJ (Min.)
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) ( Rev : 2009 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1999 )
Toshiba
