2SD1861 数据手册 ( 数据表 ) - ETC
生产厂家
ETC
[ROHM]
FEATUREs
1) Darlington connection provises high DC current gain (hFE).
2) Built-in resistance of approx. 4kΩ between its base and emitter. Excellent temprature stability.
Medium Power Amp. Epitaxial Planar NPN Silicon Transistors
ROHM Semiconductor
Medium Power Amp. Epitaxial Planar NPN Silicon Transistors
ROHM Semiconductor
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
Zetex => Diodes
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
Diodes Incorporated.
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
Zetex => Diodes
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
Diodes Incorporated.
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
Diodes Incorporated.
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
Diodes Incorporated.
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
Zetex => Diodes
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
Zetex => Diodes
