2SD1785 数据手册 ( 数据表 ) - Inchange Semiconductor
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Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)
• Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A
• High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V
• Complement to Type 2SB1258
APPLICATIONS
• Driver for solenoid, relay and motor, series regulator, and general purpose applications.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.