零件编号
2SD1515
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Inchange Semiconductor
2SD1515 数据手册 ( 数据表 ) - Inchange Semiconductor
Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
• High DC Current Gain
: hFE= 1000(Min) @ IC= 10A, VCE= 3V
• Fast Switching Speed
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for low frequency power amplifier and high
current switching applications.
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