2SD1509(1997) 数据手册 ( 数据表 ) - Toshiba
生产厂家
Toshiba
MICRO-MOTOR DRIVE, HAMMER DRIVE APPLICATIONS
SWITCHING APPLICATIONS
POWER AMPLIFIER APPLICATIONS
• High DC Current Gain: hFE = 2000 (Min.)
• Low Saturation Voltage
: VCE (sat) = 1.5 V (Max.)
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) ( Rev : 2004 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1997 )
Toshiba
