2SD1500 数据手册 ( 数据表 ) - ETC
生产厂家
ETC
[Iscsemi]
DESCRIPTION
· Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
· High DC Current Gain
: hFE= 1000(Min) @IC= 10A
· Low Saturation Voltage
APPLICATIONS
· Designed for high current switching applications.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
