2SD1499-252 数据手册 ( 数据表 ) - Inchange Semiconductor
生产厂家

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min)
• Wide Area of Safe Operation
• Complement to Type 2SB1063
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for high power amplifications.
Silicon NPN Power Transisto
Inchange Semiconductor
Silicon NPN Power Transisto
Inchange Semiconductor
Silicon NPN Power Transisto
New Jersey Semiconductor
Silicon NPN Power Transisto
New Jersey Semiconductor
Silicon NPN Darlington Power Transisto
New Jersey Semiconductor
NPN Silicon RF Transisto
Infineon Technologies
Silicon NPN RF Transisto
New Jersey Semiconductor
Silicon PNP Power Transisto
New Jersey Semiconductor
NPN SILICON GERMANIUM RF TRANSISTO
NEC => Renesas Technology
Silicon PNP Power Transisto
New Jersey Semiconductor