2SD1414 数据手册 ( 数据表 ) - Inchange Semiconductor
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Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
• Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
• High DC Current Gain
: hFE= 2000(Min) @ IC= 1A, VCE= 2V
• Complement to Type 2SB1024
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Switching applications
• Hammer driver,pulse motor driver applications
• Power amplifier applications.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.