2SD1233 数据手册 ( 数据表 ) - Inchange Semiconductor
生产厂家
Inchange Semiconductor
DESCRIPTION
• High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V
• Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.)
APPLICATIONS
• Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
