零件编号
2SD1223(TE16L1,NQ)
Other PDF
no available.
PDF
page
5 Pages
File Size
154.1 kB
生产厂家
Toshiba
HOME >>> Toshiba >>> 2SD1223(TE16L1,NQ) PDF
2SD1223(TE16L1,NQ) 数据手册 ( 数据表 ) - Toshiba
Toshiba
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
• Complementary to 2SB908.
零件编号
产品描述 (功能)
视图
生产厂家
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) ( Rev : 1999 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1999 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
Share Link: 